ss3413 -a cmos omnipolar high sensitivity micropower hall switch 1 v 3.1 0 nov 1 , 20 1 3 features ? micropower consumption for battery powered applications ? omnipolar, output switches with absolute value of north or south pole from magnet ? operation down to 1.6v ? high sensitivity for direct reed switch replacement applications 3 pin sot23 (suffix so) 3 pin sip (suffix ua) general description the ss3413 - a omnipolar hall effect sensor ic is fabricated from mixed signal cmos technology .it incorporates advanced chopper - stabilization tec h- niques to provide accurate and stable magnetic switch points. the circuit design provides an internally controlled clocking mechanism to cycle power to the hall el e- ment and analog signal processing circuits. this serves to place the high current - consuming portions of the circuit into a ?sleep? mode. periodically the device is ?awakened? by this internal logic and the magnetic flux from the hall element is evaluated a gainst the predefined thresholds. if the flux density is above or below the bop/brp thresholds then the output transistor i s driven to change states accordin g- ly. while in the ?sleep? cycle t he output transistor is latched in its previous state. the design has been o p- timized for service in applications requiring extended operating lifetime in battery powered systems. the output transistor of the ss3413 - a will be latched on (b op ) in the presence of a sufficiently strong south or north magnetic field facing the marked side of the package. the output will be latched off (b rp ) in the absence of a magnetic field. applications ? solid state switch ? handheld wireless handset awake switch ? lid close sensor for battery powered devices ? magnet proximity sensor for reed switch replacement in low duty cycle applications
ss3413 -a cmos omnipolar high sensitivity micropower hall switch 2 v 3.1 0 nov 1 , 20 1 3 typical application circuit sec 's pole - independent sensing technique allows for operation with either a north pole or south pole ma g- net orientation, enhancing the manufacturability of the device. the state - of - the - art technology provides the same output polarity for either pole face. it is strongly recommended that an external bypass capacitor be connected (in close proximity to the hall sensor) between the supply and ground of the device to reduce both external noise and noise ge nerated by the chopper - stabilization technique. this is especially true due to the relatively high impedance of battery supplies. functional block diagram vdd out sleep/awake logic chopper hall plate gnd
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 3 v 3.1 0 nov 1 , 20 1 3 pin definitions and descriptions sot p i n sip pi n na m e t y pe f un c t i o n 1 1 v dd s upply s upply v oltage pin 2 3 out output open d r ain output pin 3 2 gnd g r ound g r ound pin internal timing circuit awake taw:1 75 s period sleep tsl:70ms time current 0 i sp i aw i av sample & ou t- put latched
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 4 v 3.1 0 nov 1 , 20 1 3 absolute maximum ratings parameter symbol va l ue units supply voltage(operating) v dd 6 v supply current i dd 5 ma output voltage v out 6 v output curent i out 5 ma operating temperature range t a - 40 to 85 c storage temperature rang t s - 50 to 150 c esd sensitivity - 4000 v exceeding the absolute maximum ratings may cause permanent damage. exposure to absolute - maximum rated conditions for e x- tended periods may affect device reliability. dc electrical c haracteristics dc operating parameters: t a = 25 c , v dd =2.75v. parameter symbol test conditions min typ max units operating voltage v dd operating 1.6 2.4 3.5 v supply current i dd average 5 a output current i out 1.0 ma saturation voltage v s at i out =1ma 0.4 v awake mode time t aw operating 175 s sleep mode time t sl operating 70 ms magnetic characteristics operating parameters: t a = 25 c, v dd =2.75v dc . parameter symbol min type max units operating point b op - +/ - 35 +/ - 60 gs release point b rp +/ - 5 +/ - 21 - gs hysteresis b hys - 14 - gs magnetic flux(gauss) on b ops b rps b opn b rpn off output voltage(v) 0 40 20 60 80 - 60 - 80 - 40 - 20 3.0 2.0 1.5 1.0 0.5 0 2.5
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 5 v 3.1 0 nov 1 , 20 1 3 esd protection human body model (hbm) tests according to: mil. std. 883f method 3015.7 parameter symbol limit values unit notes min max esd voltage v esd 4 kv p erformance c haracteristics unique features cmos hall ic technology the chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. cmos makes this advanced technique possible. the cmos chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. the small chip size also contributes to lower physical stress and less power consumption.
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 6 v 3.1 0 nov 1 , 20 1 3 installation comments consider temperature coefficients of hall ic and magnetics , as well as air gap and life ti me variations. observe temperature limits during wave soldering. typical ir solder - reflow profile: ? no rapid heating and cooling. ? recommended preheating for max. 2minutes at 150 c ? recommended reflowing for max. 5seconds at 240 c esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling s emiconductor products.
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 7 v 3.1 0 nov 1 , 20 1 3 package information package so , 3- pin sot - 23: sot - 23 package hall location 0.56 0.66 0.95 0.80 1.50 1.40 chip 3 2 1 bottom view of sot - 23 package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 m in 2.60 3.00 1.50 1.8 0 1.70 2.10 3 2 1 top view side view end v iew notes 1). pinout: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters;
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 8 v 3.1 0 nov 1 , 20 1 3 package st, 3 - pin t so t - 23: t sot - 23 package hall location 0. 3 6 0. 4 6 0.95 0.80 1.50 1.40 chip 3 2 1 bottom view of t sot - 23 package 2. 82 3. 02 0. 70 0. 90 0.70 0. 80 0.00 0.10 0.35 0.50 0. 0 8 0.2 0 0.20 m in 2.6 5 2. 95 1. 6 0 1. 7 0 1.70 2.10 3 2 1 top view side view end v iew notes 1). pinout: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters;
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 9 v 3.1 0 nov 1 , 20 1 3 package ua, 3 - pin sip: 4.0 0.01 1 2 3 1.27 2.13 1.87 1.00 1.20 45 1 1.52 0.1 3 1 0.75 0.05 3.0 0.01 0.44 0.01 0.05 0.05 1.6. 0.1 0.84(nom) 3 1 6 1 6 1 3 1 14 .5 1 active area depth: sensor location 1 2 3 notes: 1). controlling dimension : mm ; 2). le a ds must be free of flash and plating voids ; 3). do not bend leads within 1 mm of lead to package interface ; 4). pinout: pin 1 v dd pin 2 gnd pin 3 output 0.39 0.01 0.38 0.01 2.54
ss3 4 13-a cmos omnipolar high sensitivity micropower hall switch 10 v 3.1 0 nov 1 , 20 1 3 ordering information part no. pb - free temperature code package code packing ss3413 - a esot yes - 40c to 85c sot - 23 7- in. reel, 3000 pieces/ reel ss3413 - a es t t yes - 40c to 85c t sot - 23 7- in. reel, 3000 pieces/ reel ss3413 - a eua yes - 40c to 85c to - 92 bulk, 1000 pieces/ bag ss3413 - a ksot yes - 40c to 125c sot - 23 7- in. reel, 3000 pieces/ reel ss3413 - a ks t t yes - 40c to 125c ts ot - 23 7- in. reel, 3000 pieces/ reel ss3413 - a kua yes - 40c to 125c to - 92 bulk, 1000 pieces/ bag ss3413 - a lsot yes - 40c to 150c sot - 23 7- in. reel, 3000 pieces/ reel ss3413 - a ls t t yes - 40c to 150c t sot - 23 7- in. reel, 3000 pieces/ reel ss3413 - a lua yes - 40c to 150c to - 92 bulk, 1000 pieces/ bag
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